IPA50R950CEInfineon
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    • Manufacturer No：
      IPA50R950CE
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      2654781
    • Description：
      N-Channel 500 V 4.3A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-31
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    • Qty Unit Price price
    • 1 $1337.179 $1337.179
    • 10 $1323.939 $13239.39
    • 100 $1310.83 $131083
    • 1000 $1297.851 $1297851
    • 10000 $1285 $12850000

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    • Manufacturer No：
      IPA50R950CE
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPA50R950CE
    • SKU：
      2654781
    • Description：
      N-Channel 500 V 4.3A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-31

    User Guide

    User Guide

    IPA50R950CE Details

    N-Channel 500 V 4.3A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-31

    IPA50R950CE Specification Parameters

    • Surface Mount: NO
    • Mounting Type: Through Hole
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Factory Lead Time: 6 Weeks
    • Number of Terminations: 3
    • Published: 2008
    • Reach Compliance Code: compliant
    • Drain to Source Voltage (Vdss): 500V
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JEDEC-95 Code: TO-220AB
    • JESD-30 Code: R-PSFM-T3
    • Series: CoolMOS?
    • Pulsed Drain Current-Max (IDM): 12.8A
    • Current - Continuous Drain (Id) @ 25°C: 4.3A Tc
    • Avalanche Energy Rating (Eas): 68 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
    • Power Dissipation-Max: 25.7W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Transistor Element Material: SILICON
    • Terminal Position: SINGLE
    • DS Breakdown Voltage-Min: 500V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Operating Temperature: -40°C~150°C TJ
    • Drive Voltage (Max Rds On,Min Rds On): 13V
    • Package / Case: TO-220-3 Full Pack
    • FET Feature: Super Junction
    • Drain-source On Resistance-Max: 0.95Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 100μA
    • Rds On (Max) @ Id, Vgs: 950m Ω @ 1.2A, 13V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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