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- Manufacturer No：IPD50P04P4L11ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPD50P04P4L11ATMA1
- SKU：2659836
- Description：P-Channel 40 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313
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User Guide
IPD50P04P4L11ATMA1 Details
P-Channel 40 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313
IPD50P04P4L11ATMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Number of Pins: 3
- Terminal Form: GULL WING
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- Gate to Source Voltage (Vgs): 16V
- Drain to Source Voltage (Vdss): 40V
- Operating Temperature: -55°C~175°C TJ
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Series: OptiMOS?
- Max Dual Supply Voltage: -40V
- Current - Continuous Drain (Id) @ 25°C: 50A Tc
- Turn-Off Delay Time: 46 ns
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
- Rds On (Max) @ Id, Vgs: 10.6m Ω @ 50A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Lead Free: Contains Lead
- Published: 2010
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Part Status: Not For New Designs
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Continuous Drain Current (ID): 50A
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM): 200A
- Turn On Delay Time: 12 ns
- Vgs (Max): ±16V
- Rise Time: 9ns
- Fall Time (Typ): 39 ns
- Power Dissipation: 58W
- Power Dissipation-Max: 58W Tc
- Vgs(th) (Max) @ Id: 2.2V @ 85μA
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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