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- Manufacturer No：BUP213
- Manufacturer：Infineon
- Category：Transistors - IGBTs - Single
- Datasheet：BUP213
- SKU：2659875
- Description：IGBT 1200V 32A 200W TO220
User Guide
User Guide
BUP213 Details
IGBT 1200V 32A 200W TO220
BUP213 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Element Configuration: Single
- Gate-Emitter Voltage-Max: 20V
- Operating Temperature: -55°C~150°C TJ
- Max Power Dissipation: 200W
- Gate-Emitter Thr Voltage-Max: 6.5V
- JEDEC-95 Code: TO-220AB
- Collector Emitter Breakdown Voltage: 1.2kV
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Max Collector Current: 32A
- Subcategory: Insulated Gate BIP Transistors
- Transistor Application: MOTOR CONTROL
- Fall Time-Max (tf): 95ns
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Transistor Element Material: SILICON
- Input Type: Standard
- Published: 2002
- Terminal Finish: MATTE TIN
- Power - Max: 200W
- Package / Case: TO-220-3
- Polarity/Channel Type: N-CHANNEL
- Collector Emitter Voltage (VCEO): 1.2kV
- Turn On Time: 70 ns
- Rise Time: 70ns
- Turn Off Time-Nom (toff): 400 ns
- Current - Collector Pulsed (Icm): 64A
- Additional Feature: HIGH SPEED
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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