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- Manufacturer No：IPB036N12N3GATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB036N12N3GATMA1
- SKU：2661580
- Description：Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
User Guide
User Guide
IPB036N12N3GATMA1 Details
Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
IPB036N12N3GATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 4
- Lead Free: Contains Lead
- Number of Terminations: 6
- Threshold Voltage: 3V
- Reach Compliance Code: not_compliant
- Published: 2008
- Terminal Finish: Tin (Sn)
- Number of Pins: 7
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Drain to Source Breakdown Voltage: 120V
- Transistor Application: SWITCHING
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 35 ns
- Continuous Drain Current (ID): 180A
- Power Dissipation-Max: 300W Tc
- JESD-30 Code: R-PSSO-G6
- Current - Continuous Drain (Id) @ 25°C: 180A Tc
- Vgs(th) (Max) @ Id: 4V @ 270μA
- Drain-source On Resistance-Max: 0.0036Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pbfree Code: no
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Factory Lead Time: 13 Weeks
- Max Junction Temperature (Tj): 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- FET Type: N-Channel
- Max Dual Supply Voltage: 120V
- Height: 4.5mm
- Operating Temperature: -55°C~175°C TJ
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 300W
- Case Connection: DRAIN
- Series: OptiMOS?
- Fall Time (Typ): 21 ns
- Rise Time: 52 ns
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Turn-Off Delay Time: 76 ns
- Avalanche Energy Rating (Eas): 900 mJ
- Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
- Rds On (Max) @ Id, Vgs: 3.6m Ω @ 100A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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