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- Manufacturer No：IPB80N06S209ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB80N06S209ATMA1
- SKU：2663166
- Description：N-Channel 55 V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2
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User Guide
IPB80N06S209ATMA1 Details
N-Channel 55 V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2
IPB80N06S209ATMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- DS Breakdown Voltage-Min: 55V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series: OptiMOS?
- Pulsed Drain Current-Max (IDM): 320A
- Power Dissipation-Max: 190W Tc
- Drain-source On Resistance-Max: 0.0088Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Published: 2006
- Transistor Element Material: SILICON
- Part Status: Discontinued
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 55V
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Drain Current-Max (Abs) (ID): 80A
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Avalanche Energy Rating (Eas): 370 mJ
- Vgs(th) (Max) @ Id: 4V @ 125μA
- Rds On (Max) @ Id, Vgs: 8.8m Ω @ 50A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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