IPB100N06S3-03Infineon
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    • Manufacturer No：
      IPB100N06S3-03
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB100N06S3-03
    • SKU：
      2663924
    • Description：
      MOSFET N-CH 55V 100A D2PAK

    User Guide

    User Guide

    IPB100N06S3-03 Details

    MOSFET N-CH 55V 100A D2PAK

    IPB100N06S3-03 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Published: 2007
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Voltage - Rated DC: 55V
    • Continuous Drain Current (ID): 100A
    • Power Dissipation: 300W
    • Subcategory: FET General Purpose Power
    • Pulsed Drain Current-Max (IDM): 400A
    • Additional Feature: AVALANCHE RATED
    • Power Dissipation-Max: 300W Tc
    • Turn-Off Delay Time: 77 ns
    • Drain-source On Resistance-Max: 0.003Ohm
    • Rds On (Max) @ Id, Vgs: 3m Ω @ 80A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 40
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 55V
    • Current Rating: 100A
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Fall Time (Typ): 60 ns
    • Series: OptiMOS?
    • Current - Continuous Drain (Id) @ 25°C: 100A Tc
    • Rise Time: 67 ns
    • Vgs(th) (Max) @ Id: 4V @ 230μA
    • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
    • Avalanche Energy Rating (Eas): 2390 mJ
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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