IPB80N06S3L-06Infineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IPB80N06S3L-06
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB80N06S3L-06
    • SKU：
      2666692
    • Description：
      MOSFET N-CH 55V 80A TO-263

    User Guide

    User Guide

    IPB80N06S3L-06 Details

    MOSFET N-CH 55V 80A TO-263

    IPB80N06S3L-06 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Published: 2007
    • Element Configuration: Single
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Drain to Source Breakdown Voltage: 55V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Current Rating: 80A
    • Turn-Off Delay Time: 55 ns
    • Vgs (Max): ±16V
    • Current - Continuous Drain (Id) @ 25°C: 80A Tc
    • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
    • Power Dissipation-Max: 136W Tc
    • Power Dissipation: 136W
    • Drain-source On Resistance-Max: 0.0056Ohm
    • Vgs(th) (Max) @ Id: 2.2V @ 80μA
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Voltage - Rated DC: 55V
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Continuous Drain Current (ID): 80A
    • Series: OptiMOS?
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Pulsed Drain Current-Max (IDM): 320A
    • Fall Time (Typ): 39 ns
    • Avalanche Energy Rating (Eas): 250 mJ
    • Rise Time: 43ns
    • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9417pF @ 25V
    Search for similar products

    IPB80N06S3L-06 Similar Products

    The four parts on the right have similar specifications to Infineon & IPB80N06S3L-06

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via