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- Manufacturer No：IRF9Z24
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9Z24
- SKU：266706
- Description：MOSFET P-CH 60V 11A TO-220AB
User Guide
User Guide
IRF9Z24 Details
MOSFET P-CH 60V 11A TO-220AB
IRF9Z24 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Drain to Source Voltage (Vdss): 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: P-Channel
- Continuous Drain Current (ID): 11A
- Length: 10.41mm
- Voltage - Rated DC: -60V
- Fall Time (Typ): 29 ns
- Power Dissipation-Max: 60W Tc
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Rise Time: 68ns
- Input Capacitance: 570pF
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Turn-Off Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 13 ns
- Drain to Source Resistance: 280mOhm
- Weight: 6.000006g
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Height: 9.01mm
- Rds On Max: 280 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Current Rating: -11A
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