IPD60R600E6Infineon
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    • Manufacturer No：
      IPD60R600E6
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPD60R600E6
    • SKU：
      2667178
    • Description：
      N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3

    User Guide

    User Guide

    IPD60R600E6 Details

    N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3

    IPD60R600E6 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Published: 2015
    • Terminal Finish: Tin (Sn)
    • Drain to Source Voltage (Vdss): 600V
    • Terminal Position: SINGLE
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Drain Current-Max (Abs) (ID): 7.3A
    • Drain-source On Resistance-Max: 0.6Ohm
    • Current - Continuous Drain (Id) @ 25°C: 7.3A Tc
    • Vgs(th) (Max) @ Id: 3.5V @ 200μA
    • Avalanche Energy Rating (Eas): 133 mJ
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Pbfree Code: no
    • Terminal Form: GULL WING
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • DS Breakdown Voltage-Min: 600V
    • Part Status: Discontinued
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Pulsed Drain Current-Max (IDM): 19A
    • Series: CoolMOS?
    • Power Dissipation-Max: 63W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
    • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
    • Rds On (Max) @ Id, Vgs: 600m Ω @ 2.4A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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