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Inventory:3953
  • Qty Unit Price price
  • 1 $2776.334 $2776.334
  • 10 $2748.845 $27488.45
  • 100 $2721.628 $272162.8
  • 1000 $2694.681 $2694681
  • 10000 $2668 $26680000

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  • Manufacturer No:
    IRF9540NSTRLPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF9540NSTRLPBF
  • SKU:
    2669457
  • Description:
    MOSFET P-CH 100V 23A D2PAK

IRF9540NSTRLPBF Details

MOSFET P-CH 100V 23A D2PAK

IRF9540NSTRLPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2003
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Current: 23A
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Turn On Delay Time: 13 ns
  • Voltage - Rated DC: -100V
  • Recovery Time: 210 ns
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Threshold Voltage: -4V
  • Rise Time: 67 ns
  • Current - Continuous Drain (Id) @ 25°C: 23A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Height: 5.084mm
  • Continuous Drain Current (ID): -23A
  • Power Dissipation-Max: 3.1W Ta 110W Tc
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Lead Free: Contains Lead
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Dual Supply Voltage: 100V
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: Other Transistors
  • Case Connection: DRAIN
  • FET Type: P-Channel
  • Turn-Off Delay Time: 40 ns
  • Width: 9.65mm
  • Length: 10.668mm
  • Drain to Source Breakdown Voltage: -100V
  • Fall Time (Typ): 51 ns
  • Power Dissipation: 3.8W
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
  • Resistance: 117mOhm
  • Nominal Vgs: -4 V
  • Avalanche Energy Rating (Eas): 84 mJ
  • Current Rating: -23A
  • Rds On (Max) @ Id, Vgs: 117m Ω @ 14A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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