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- Manufacturer No：IPG20N06S3L-35
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IPG20N06S3L-35
- SKU：2671655
- Description：OptiMOS™ Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 23nC @ 10V 20A 30W 55V
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IPG20N06S3L-35 Details
OptiMOS™ Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 23nC @ 10V 20A 30W 55V
IPG20N06S3L-35 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Part Status: Obsolete
- Pin Count: 8
- Number of Terminations: 6
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Terminal Finish: MATTE TIN
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Voltage (Vdss): 55V
- Max Power Dissipation: 30W
- Case Connection: DRAIN
- FET Feature: Logic Level Gate
- Series: OptiMOS?
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain-source On Resistance-Max: 0.035Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
- Vgs(th) (Max) @ Id: 2.2V @ 15μA
- Number of Elements: 2
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- JESD-609 Code: e3
- Number of Pins: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Published: 2008
- Continuous Drain Current (ID): 20A
- Terminal Form: FLAT
- Operating Mode: ENHANCEMENT MODE
- DS Breakdown Voltage-Min: 55V
- Power - Max: 30W
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Type: 2 N-Channel (Dual)
- JESD-30 Code: R-PDSO-F6
- Package / Case: 8-PowerVDFN
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Avalanche Energy Rating (Eas): 55 mJ
- Base Part Number: *PG20N06
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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