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- Manufacturer No：SI7234DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7234DP-T1-GE3
- SKU：267299
- Description：MOSFET 2N-CH 12V 60A PPAK SO-8
User Guide
User Guide
SI7234DP-T1-GE3 Details
MOSFET 2N-CH 12V 60A PPAK SO-8
SI7234DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Continuous Drain Current (ID): 60A
- Fall Time (Typ): 25 ns
- Turn On Delay Time: 30 ns
- Turn-Off Delay Time: 90 ns
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Weight: 506.605978mg
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Power - Max: 46W
- Package / Case: PowerPAK? SO-8 Dual
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Number of Terminations: 6
- Published: 2015
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- FET Feature: Standard
- Length: 4.9mm
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 15 ns
- Power Dissipation: 3.5W
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Height: 1.04mm
- Width: 5.89mm
- Max Power Dissipation: 46W
- Resistance: 3.4MOhm
- JESD-30 Code: R-XDSO-C6
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