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  • Manufacturer No:
    FF100R12RT4HOSA1
  • Manufacturer:
  • Category:
    Transistors - IGBTs - Modules
  • Datasheet:
    Get the PDF file
  • SKU:
    2678505
  • Description:
    IGBT Modules IGBT Module w/ IGBT & Diode
  • Quantity:
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Inventory:0
  • Qty Unit Price price
  • 1 $108.1 $108.1
  • 10 $107.029 $1070.29
  • 100 $105.969 $10596.9
  • 1000 $104.919 $104919

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  • Manufacturer No:
    FF100R12RT4HOSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - IGBTs - Modules
  • Datasheet:
    FF100R12RT4HOSA1
  • SKU:
    2678505
  • Description:
    IGBT Modules IGBT Module w/ IGBT & Diode

FF100R12RT4HOSA1 Details

IGBT Modules IGBT Module w/ IGBT & Diode

FF100R12RT4HOSA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • RoHS Status: RoHS Compliant
  • NTC Thermistor: No
  • Pbfree Code: no
  • Number of Terminations: 5
  • Element Configuration: Dual
  • Input: Standard
  • Published: 2002
  • Case Connection: ISOLATED
  • Terminal Form: UNSPECIFIED
  • Terminal Position: UPPER
  • Operating Temperature: -40°C~150°C
  • Halogen Free: Not Halogen Free
  • IGBT Type: Trench Field Stop
  • JESD-30 Code: R-XUFM-X5
  • Turn Off Time-Nom (toff): 490 ns
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
  • Surface Mount: NO
  • Number of Elements: 2
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Factory Lead Time: 16 Weeks
  • Mounting Type: Chassis Mount
  • Transistor Element Material: SILICON
  • Pin Count: 7
  • Package / Case: Module
  • Current - Collector Cutoff (Max): 1mA
  • Current - Collector (Ic) (Max): 100A
  • Polarity/Channel Type: N-CHANNEL
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Transistor Application: POWER CONTROL
  • Configuration: 2 Independent
  • Turn On Time: 185 ns
  • Power - Max: 555W

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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