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- Manufacturer No：IPB180N06S4H1ATMA2
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB180N06S4H1ATMA2
- SKU：2678948
- Description：MOSFET N-CH 60V 180A TO263-7
User Guide
User Guide
IPB180N06S4H1ATMA2 Details
MOSFET N-CH 60V 180A TO263-7
IPB180N06S4H1ATMA2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 6
- Factory Lead Time: 16 Weeks
- Drain to Source Breakdown Voltage: 60V
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Number of Pins: 7
- Height: 4.57mm
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Turn On Delay Time: 30 ns
- Turn-Off Delay Time: 60 ns
- Continuous Drain Current (ID): 180A
- Power Dissipation-Max: 250W Tc
- JESD-30 Code: R-PSSO-G6
- Current - Continuous Drain (Id) @ 25°C: 180A Tc
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Rds On (Max) @ Id, Vgs: 1.7m Ω @ 100A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Dual Supply Voltage: 60V
- Published: 2009
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Fall Time (Typ): 15 ns
- Rise Time: 5 ns
- Length: 10.31mm
- Weight: 1.59999g
- Series: Automotive, AEC-Q101, OptiMOS?
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Width: 9.45mm
- Vgs(th) (Max) @ Id: 4V @ 200μA
- Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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