IRF5210SPBFInfineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF5210SPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF5210SPBF
    • SKU：
      2679886
    • Description：
      MOSFET P-CH 100V 38A D2PAK

    User Guide

    User Guide

    IRF5210SPBF Details

    MOSFET P-CH 100V 38A D2PAK

    IRF5210SPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Number of Elements: 1
    • Surface Mount: YES
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • DS Breakdown Voltage-Min: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Subcategory: Other Transistors
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • HTS Code: 8541.29.00.95
    • Pulsed Drain Current-Max (IDM): 140A
    • Avalanche Energy Rating (Eas): 120 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
    • Rds On (Max) @ Id, Vgs: 60m Ω @ 38A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Voltage (Vdss): 100V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Part Status: Discontinued
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • FET Type: P-Channel
    • Series: HEXFET?
    • Drain Current-Max (Abs) (ID): 38A
    • Drain-source On Resistance-Max: 0.06Ohm
    • Current - Continuous Drain (Id) @ 25°C: 38A Tc
    • Additional Feature: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
    • Power Dissipation-Max: 3.1W Ta 170W Tc
    Search for similar products

    IRF5210SPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF5210SPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via