IPB80P03P4L04ATMA1Infineon
    Add to like
    Add to project list
    IPB80P03P4L04ATMA1123
    Inventory:0
    • Qty Unit Price price
    • 1 $1.154 $1.154
    • 10 $1.142 $11.42
    • 100 $1.13 $113
    • 1000 $1.118 $1118
    • 10000 $1.1067 $11067

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IPB80P03P4L04ATMA1
    • Manufacturer No：
      IPB80P03P4L04ATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB80P03P4L04ATMA1
    • SKU：
      2680834
    • Description：
      MOSFET P-CH 30V 80A TO263-3

    User Guide

    User Guide

    IPB80P03P4L04ATMA1 Details

    MOSFET P-CH 30V 80A TO263-3

    IPB80P03P4L04ATMA1 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Reach Compliance Code: not_compliant
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • Part Status: Not For New Designs
    • Operating Temperature: -55°C~175°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 40 ns
    • Series: OptiMOS?
    • Turn On Delay Time: 17 ns
    • Turn-Off Delay Time: 140 ns
    • Drain-source On Resistance-Max: 0.007Ohm
    • Vgs (Max): +5V, -16V
    • Power Dissipation-Max: 137W Tc
    • Rds On (Max) @ Id, Vgs: 4.1m Ω @ 80A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Gate to Source Voltage (Vgs): 5V
    • Lead Free: Contains Lead
    • Factory Lead Time: 14 Weeks
    • Published: 2008
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 80A
    • FET Type: P-Channel
    • Rise Time: 11 ns
    • Max Dual Supply Voltage: -30V
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Current - Continuous Drain (Id) @ 25°C: 80A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Avalanche Energy Rating (Eas): 410 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
    • Vgs(th) (Max) @ Id: 2V @ 253μA
    Search for similar products

    IPB80P03P4L04ATMA1 Similar Products

    The four parts on the right have similar specifications to Infineon & IPB80P03P4L04ATMA1

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via