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  • Manufacturer No:
    IRFB4620PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFB4620PBF
  • SKU:
    2681382
  • Description:
    MOSFET N-CH 200V 25A TO-220AB

IRFB4620PBF Details

MOSFET N-CH 200V 25A TO-220AB

IRFB4620PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Dual Supply Voltage: 200V
  • Published: 2008
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Package / Case: TO-220-3
  • JEDEC-95 Code: TO-220AB
  • Width: 4.826mm
  • Nominal Vgs: 3 V
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 25A Tc
  • Turn On Delay Time: 13.4 ns
  • Fall Time (Typ): 14.8 ns
  • Turn-Off Delay Time: 25.4 ns
  • Resistance: 72.5mOhm
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Drain to Source Breakdown Voltage: 200V
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Continuous Drain Current (ID): 25A
  • Subcategory: FET General Purpose Power
  • Series: HEXFET?
  • Height: 9.02mm
  • Length: 10.668mm
  • Vgs(th) (Max) @ Id: 5V @ 100μA
  • Power Dissipation: 144W
  • Power Dissipation-Max: 144W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
  • Rise Time: 22.4ns

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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