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  • Manufacturer No:
    IRF7831TRPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2682267
  • Description:
    Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8
  • Quantity:
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Inventory:17843
  • Qty Unit Price price
  • 1 $1.282 $1.282
  • 10 $1.269 $12.69
  • 100 $1.256 $125.6
  • 1000 $1.243 $1243
  • 10000 $1.23 $12300

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  • Manufacturer No:
    IRF7831TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7831TRPBF
  • SKU:
    2682267
  • Description:
    Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8

IRF7831TRPBF Details

Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8

IRF7831TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Gate to Source Voltage (Vgs): 12V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 30V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Power Dissipation: 2.5W
  • Width: 3.9878mm
  • Series: HEXFET?
  • Turn-Off Delay Time: 17 ns
  • Continuous Drain Current (ID): 21A
  • Threshold Voltage: 2.35V
  • Power Dissipation-Max: 2.5W Ta
  • Resistance: 3.6MOhm
  • Current - Continuous Drain (Id) @ 25°C: 21A Ta
  • Vgs(th) (Max) @ Id: 2.35V @ 250μA
  • Nominal Vgs: 2.35 V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Factory Lead Time: 12 Weeks
  • REACH SVHC: No SVHC
  • Published: 2005
  • Voltage - Rated DC: 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Rise Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Height: 1.4986mm
  • Turn On Delay Time: 18 ns
  • Current Rating: 21A
  • Vgs (Max): ±12V
  • Fall Time (Typ): 5.3 ns
  • Length: 4.9784mm
  • Recovery Time: 62 ns
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 3.6m Ω @ 20A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 15V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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