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- Manufacturer No：IRFB7434PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB7434PBF
- SKU：2682463
- Description：Single N-Channel 40 V 1.6 mOhm 324 nC HEXFET® Power Mosfet - TO-220-3
User Guide
User Guide
IRFB7434PBF Details
Single N-Channel 40 V 1.6 mOhm 324 nC HEXFET® Power Mosfet - TO-220-3
IRFB7434PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Published: 2012
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Width: 4.83mm
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Length: 10.67mm
- Turn On Delay Time: 24 ns
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Turn-Off Delay Time: 115 ns
- Continuous Drain Current (ID): 195A
- Current - Continuous Drain (Id) @ 25°C: 195A Tc
- Power Dissipation: 294W
- Avalanche Energy Rating (Eas): 490 mJ
- Gate Charge (Qg) (Max) @ Vgs: 324nC @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Threshold Voltage: 3V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 40V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Height: 16.51mm
- Nominal Vgs: 3 V
- Recovery Time: 38 ns
- Resistance: 1.6MOhm
- Rise Time: 68 ns
- Series: HEXFET?, StrongIRFET?
- Vgs(th) (Max) @ Id: 3.9V @ 250μA
- Power Dissipation-Max: 294W Tc
- Rds On (Max) @ Id, Vgs: 1.6m Ω @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10820pF @ 25V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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