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  • 10 $0.95 $9.5
  • 100 $0.94 $94
  • 1000 $0.93 $930

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  • Manufacturer No:
    IRF520N
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF520N
  • SKU:
    2682912
  • Description:
    MOSFET N-CH 100V 9.7A TO-220AB

IRF520N Details

MOSFET N-CH 100V 9.7A TO-220AB

IRF520N Specification Parameters

  • Surface Mount: NO
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Drain to Source Voltage (Vdss): 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Package / Case: TO-220-3
  • Case Connection: DRAIN
  • JESD-30 Code: R-PSFM-T3
  • Series: HEXFET?
  • Pulsed Drain Current-Max (IDM): 38A
  • Drain Current-Max (Abs) (ID): 9.7A
  • Power Dissipation-Max: 48W Tc
  • Current - Continuous Drain (Id) @ 25°C: 9.7A Tc
  • Avalanche Energy Rating (Eas): 91 mJ
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Qualification Status: Not Qualified
  • DS Breakdown Voltage-Min: 100V
  • Transistor Element Material: SILICON
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Additional Feature: HIGH RELIABILITY
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code: TO-220AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Published: 1995
  • Drain-source On Resistance-Max: 0.2Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Rds On (Max) @ Id, Vgs: 200m Ω @ 5.7A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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