IRF9Z34NSTRRPBFInfineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price
    • 1 $1.334 $1.334
    • 10 $1.32 $13.2
    • 100 $1.306 $130.6
    • 1000 $1.293 $1293

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF9Z34NSTRRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF9Z34NSTRRPBF
    • SKU：
      2682925
    • Description：
      MOSFET P-CH 55V 19A D2PAK

    User Guide

    User Guide

    IRF9Z34NSTRRPBF Details

    MOSFET P-CH 55V 19A D2PAK

    IRF9Z34NSTRRPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Part Status: Not For New Designs
    • Published: 1997
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • DS Breakdown Voltage-Min: 55V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Drain Current-Max (Abs) (ID): 19A
    • Pulsed Drain Current-Max (IDM): 68A
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
    • Power Dissipation-Max: 3.8W Ta 68W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Surface Mount: YES
    • Factory Lead Time: 10 Weeks
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Voltage (Vdss): 55V
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • FET Type: P-Channel
    • Series: HEXFET?
    • Drain-source On Resistance-Max: 0.1Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 19A Tc
    • Avalanche Energy Rating (Eas): 180 mJ
    • Rds On (Max) @ Id, Vgs: 100m Ω @ 10A, 10V
    Search for similar products

    IRF9Z34NSTRRPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF9Z34NSTRRPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via