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- Manufacturer No：IRFI640G
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFI640G
- SKU：268330
- Description：MOSFET N-CH 200V 9.8A TO220FP
User Guide
User Guide
IRFI640G Details
MOSFET N-CH 200V 9.8A TO220FP
IRFI640G Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Published: 1997
- Vgs (Max): ±20V
- Power Dissipation: 40W
- Turn-Off Delay Time: 45 ns
- Drain to Source Resistance: 180mOhm
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Fall Time (Typ): 36 ns
- Input Capacitance: 1.3nF
- Continuous Drain Current (ID): 9.8A
- Length: 10.63mm
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 9.8A Tc
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 4.83mm
- Supplier Device Package: TO-220-3
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Height: 9.8mm
- Turn On Delay Time: 14 ns
- Weight: 6.000006g
- Rds On Max: 180 mΩ
- Current Rating: 9.8A
- Power Dissipation-Max: 40W Tc
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Rise Time: 51ns
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5.9A, 10V
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