IRG4RC10SDTRPBFInfineon
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    • Manufacturer No：
      IRG4RC10SDTRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IRG4RC10SDTRPBF
    • SKU：
      2684300
    • Description：
      IGBT - 600 V 14 A 38 W Surface Mount D-Pak

    User Guide

    User Guide

    IRG4RC10SDTRPBF Details

    IGBT - 600 V 14 A 38 W Surface Mount D-Pak

    IRG4RC10SDTRPBF Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Collector Emitter Voltage (VCEO): 1.8V
    • Element Configuration: Single
    • Collector Emitter Breakdown Voltage: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Published: 2004
    • Terminal Finish: MATTE TIN OVER NICKEL
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Current - Collector Pulsed (Icm): 18A
    • Max Collector Current: 14A
    • Subcategory: Insulated Gate BIP Transistors
    • Reverse Recovery Time: 28 ns
    • Weight: 350.003213mg
    • Additional Feature: LOW CONDUCTION LOSS
    • Power Dissipation: 38W
    • Turn On Time: 106 ns
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
    • Td (on/off) @ 25°C: 76ns/815ns
    • Turn Off Time-Nom (toff): 1780 ns
    • Base Part Number: IRG4RC10SDPBF
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 3
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Factory Lead Time: 13 Weeks
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Max Breakdown Voltage: 600V
    • Gate-Emitter Thr Voltage-Max: 6V
    • Operating Temperature: -55°C~150°C TJ
    • Collector Emitter Saturation Voltage: 1.7V
    • Height: 1.2446mm
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Transistor Application: POWER CONTROL
    • JEDEC-95 Code: TO-252AA
    • Rise Time: 32 ns
    • Length: 6.7056mm
    • Max Power Dissipation: 38W
    • Width: 6.223mm
    • Gate Charge: 15nC
    • Switching Energy: 310μJ (on), 3.28mJ (off)
    • Test Condition: 480V, 8A, 100 Ω, 15V
    • Fall Time-Max (tf): 1080 ns
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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