Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IPB80N04S306ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB80N04S306ATMA1
- SKU：2684357
- Description：N-Channel 40 V 80A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2
User Guide
User Guide
IPB80N04S306ATMA1 Details
N-Channel 40 V 80A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2
IPB80N04S306ATMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 3
- Terminal Form: GULL WING
- Published: 2007
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- Part Status: Not For New Designs
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Rise Time: 10 ns
- Turn On Delay Time: 15 ns
- HTS Code: 8541.29.00.95
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Additional Feature: ULTRA LOW RESISTANCE
- Avalanche Energy Rating (Eas): 125 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
- Rds On (Max) @ Id, Vgs: 5.4m Ω @ 80A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Lead Free: Contains Lead
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Max Dual Supply Voltage: 40V
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID): 80A
- Turn-Off Delay Time: 20 ns
- Series: OptiMOS?
- Power Dissipation-Max: 100W Tc
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Drain-source On Resistance-Max: 0.0054Ohm
- Vgs(th) (Max) @ Id: 4V @ 52μA
Search for similar products
IPB80N04S306ATMA1 Similar Products
The four parts on the right have similar specifications to Infineon & IPB80N04S306ATMA1
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
