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Inventory:260
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  • Manufacturer No:
    IRFP7530PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP7530PBF
  • SKU:
    2684482
  • Description:
    MOSFET N CH 60V 195A TO247

IRFP7530PBF Details

MOSFET N CH 60V 195A TO247

IRFP7530PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 12 Weeks
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Element Configuration: Single
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Subcategory: FET General Purpose Power
  • Threshold Voltage: 3.7V
  • Width: 5.31mm
  • Height: 20.7mm
  • Turn On Delay Time: 52 ns
  • Series: HEXFET?, StrongIRFET?
  • Vgs(th) (Max) @ Id: 3.7V @ 250μA
  • Turn-Off Delay Time: 172 ns
  • Power Dissipation: 341W
  • Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
  • Rise Time: 141ns
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Packaging: Tube
  • Published: 2013
  • Drain to Source Voltage (Vdss): 60V
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Package / Case: TO-247-3
  • Length: 15.87mm
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Weight: 38.000013g
  • Continuous Drain Current (ID): 195A
  • Current - Continuous Drain (Id) @ 25°C: 195A Tc
  • Fall Time (Typ): 104 ns
  • Rds On (Max) @ Id, Vgs: 2m Ω @ 100A, 10V
  • Power Dissipation-Max: 341W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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