IRF5801TRPBFInfineon
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    • Manufacturer No：
      IRF5801TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF5801TRPBF
    • SKU：
      2684924
    • Description：
      MOSFET N-CH 200V 600MA 6-TSOP

    User Guide

    User Guide

    IRF5801TRPBF Details

    MOSFET N-CH 200V 600MA 6-TSOP

    IRF5801TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Terminal Position: DUAL
    • Lead Free: Contains Lead
    • Number of Pins: 6
    • Termination: SMD/SMT
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Published: 2002
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Current Rating: 600mA
    • Height: 990.6μm
    • Width: 1.7mm
    • Rise Time: 8 ns
    • Series: HEXFET?
    • Resistance: 2.2Ohm
    • Pulsed Drain Current-Max (IDM): 4.8A
    • Turn-Off Delay Time: 8.8 ns
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 600mA Ta
    • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 6
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 200V
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 600mA
    • Subcategory: FET General Purpose Power
    • Vgs (Max): ±30V
    • Length: 2.9972mm
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Turn On Delay Time: 6.5 ns
    • Fall Time (Typ): 19 ns
    • Power Dissipation-Max: 2W Ta
    • Nominal Vgs: 5.5 V
    • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
    • Rds On (Max) @ Id, Vgs: 2.2 Ω @ 360mA, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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