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IPB80N06S2L06ATMA2123
Inventory:276
  • Qty Unit Price price
  • 1 $488.046 $488.046
  • 10 $483.213 $4832.13
  • 100 $478.428 $47842.8
  • 1000 $473.691 $473691
  • 10000 $469 $4690000

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IPB80N06S2L06ATMA2
  • Manufacturer No:
    IPB80N06S2L06ATMA2
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB80N06S2L06ATMA2
  • SKU:
    2684996
  • Description:
    MOSFET N-CH 55V 80A TO263-3

IPB80N06S2L06ATMA2 Details

MOSFET N-CH 55V 80A TO263-3

IPB80N06S2L06ATMA2 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 3
  • Lead Free: Contains Lead
  • Reach Compliance Code: not_compliant
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Height: 4.4mm
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • Max Dual Supply Voltage: 55V
  • Case Connection: DRAIN
  • Continuous Drain Current (ID): 80A
  • Fall Time (Typ): 20 ns
  • Turn-Off Delay Time: 60 ns
  • Series: OptiMOS?
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Power Dissipation-Max: 250W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
  • Rds On (Max) @ Id, Vgs: 6m Ω @ 69A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Factory Lead Time: 10 Weeks
  • Terminal Form: GULL WING
  • Published: 2006
  • Element Configuration: Single
  • Length: 10mm
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Power Dissipation: 250W
  • Turn On Delay Time: 11 ns
  • Rise Time: 21 ns
  • Current - Continuous Drain (Id) @ 25°C: 80A Tc
  • Width: 9.25mm
  • Drain-source On Resistance-Max: 0.0084Ohm
  • Vgs(th) (Max) @ Id: 2V @ 180μA

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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