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- Manufacturer No：IRFP150N
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP150N
- SKU：2685121
- Description：MOSFET N-CH 100V 42A TO-247AC
User Guide
User Guide
IRFP150N Details
MOSFET N-CH 100V 42A TO-247AC
IRFP150N Specification Parameters
- Surface Mount: NO
- Packaging: Bulk
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 3
- Drain to Source Voltage (Vdss): 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- JESD-30 Code: R-PSFM-T3
- Package / Case: TO-247-3
- Drain Current-Max (Abs) (ID): 42A
- Pulsed Drain Current-Max (IDM): 140A
- Current - Continuous Drain (Id) @ 25°C: 42A Tc
- Drain-source On Resistance-Max: 0.036Ohm
- Avalanche Energy Rating (Eas): 420 mJ
- Rds On (Max) @ Id, Vgs: 36m Ω @ 23A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Qualification Status: Not Qualified
- DS Breakdown Voltage-Min: 100V
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Published: 1998
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: HEXFET?
- JEDEC-95 Code: TO-247AC
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Power Dissipation-Max: 160W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Additional Feature: AVALANCHE RATED, FAST SWITCHING
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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