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Inventory:5900
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  • Manufacturer No:
    IPL60R075CFD7AUMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPL60R075CFD7AUMA1
  • SKU:
    2685217
  • Description:
    MOSFET N-CH 4VSON

IPL60R075CFD7AUMA1 Details

MOSFET N-CH 4VSON

IPL60R075CFD7AUMA1 Specification Parameters

  • Part Status: Active
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Surface Mount: YES
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 4
  • Published: 2014
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 600V
  • Terminal Form: NO LEAD
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Operating Temperature: -40°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 33A
  • Current - Continuous Drain (Id) @ 25°C: 33A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Series: CoolMOS? CFD7
  • Avalanche Energy Rating (Eas): 151 mJ
  • Vgs(th) (Max) @ Id: 4.5V @ 760μA
  • RoHS Status: ROHS3 Compliant
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Reach Compliance Code: not_compliant
  • Terminal Finish: Tin (Sn)
  • Factory Lead Time: 18 Weeks
  • Terminal Position: SINGLE
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Drain to Source Voltage (Vdss): 650V
  • Drain-source On Resistance-Max: 0.075Ohm
  • Pulsed Drain Current-Max (IDM): 129A
  • Package / Case: 4-PowerTSFN
  • JESD-30 Code: S-PSSO-N4
  • Power Dissipation-Max: 189W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2721pF @ 400V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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