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- Manufacturer No：IRF7342PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF7342PBF
- SKU：2685498
- Description：Transistor MOSFET P Channel 55 Volt 3.4 Amp 8 Pin SOIC
User Guide
User Guide
IRF7342PBF Details
Transistor MOSFET P Channel 55 Volt 3.4 Amp 8 Pin SOIC
IRF7342PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Power Dissipation-Max (Abs): 2W
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- DS Breakdown Voltage-Min: 55V
- Additional Feature: HIGH RELIABILITY
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID): 3.4A
- FET Feature: Logic Level Gate
- Vgs(th) (Max) @ Id: 1V @ 250μA
- FET Type: 2 P-Channel (Dual)
- JEDEC-95 Code: MS-012AA
- Drain-source On Resistance-Max: 0.105Ohm
- Rds On (Max) @ Id, Vgs: 105m Ω @ 3.4A, 10V
- Base Part Number: IRF7342PBF
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Surface Mount: YES
- Number of Terminations: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Power - Max: 2W
- Part Status: Discontinued
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Published: 1999
- Drain to Source Voltage (Vdss): 55V
- JESD-30 Code: R-PDSO-G8
- Subcategory: Other Transistors
- Series: HEXFET?
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Pulsed Drain Current-Max (IDM): 27A
- Factory Lead Time: 39 Weeks
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Avalanche Energy Rating (Eas): 114 mJ
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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