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- Manufacturer No：IPB010N06NATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB010N06NATMA1
- SKU：2686222
- Description：Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263
User Guide
User Guide
IPB010N06NATMA1 Details
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263
IPB010N06NATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Min Operating Temperature: -55°C
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Factory Lead Time: 13 Weeks
- Published: 2006
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Series: OptiMOS?
- Fall Time (Typ): 23 ns
- Power Dissipation-Max: 300W Tc
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
- Rise Time: 36ns
- Drain to Source Resistance: 800μOhm
- Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 208nC @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 60V
- Max Dual Supply Voltage: 60V
- Max Operating Temperature: 175°C
- Number of Pins: 7
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Power Dissipation: 300W
- Continuous Drain Current (ID): 180A
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Turn On Delay Time: 37 ns
- Turn-Off Delay Time: 74 ns
- Supplier Device Package: PG-TO263-7
- Vgs(th) (Max) @ Id: 4V @ 280μA
- Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 30V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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