IPB020N08N5ATMA1Infineon
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    Inventory:5608
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    • Manufacturer No：
      IPB020N08N5ATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB020N08N5ATMA1
    • SKU：
      2686345
    • Description：
      MOSFET N-Ch 80V 120A D2PAK-2

    User Guide

    User Guide

    IPB020N08N5ATMA1 Details

    MOSFET N-Ch 80V 120A D2PAK-2

    IPB020N08N5ATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Published: 2013
    • Terminal Form: GULL WING
    • Reach Compliance Code: not_compliant
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Halogen Free: Halogen Free
    • Max Dual Supply Voltage: 80V
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Continuous Drain Current (ID): 120A
    • Series: OptiMOS?
    • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
    • Current - Continuous Drain (Id) @ 25°C: 120A Tc
    • Turn-Off Delay Time: 62 ns
    • Drain-source On Resistance-Max: 0.002Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 208μA
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Pins: 3
    • Lead Free: Contains Lead
    • Factory Lead Time: 13 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Fall Time (Typ): 20 ns
    • Rise Time: 16 ns
    • Turn On Delay Time: 28 ns
    • Power Dissipation-Max: 300W Tc
    • Weight: 3.949996g
    • Pulsed Drain Current-Max (IDM): 480A
    • Rds On (Max) @ Id, Vgs: 2m Ω @ 100A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V
    • Avalanche Energy Rating (Eas): 674 mJ
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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