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- Manufacturer No：IS43R16160D-6TLI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS43R16160D-6TLI
- SKU：2686381
- Description：Active Tin 3-STATE DUAL ic memory -40C~85C TA 2.3V 256Mb 280mA
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IS43R16160D-6TLI Details
Active Tin 3-STATE DUAL ic memory -40C~85C TA 2.3V 256Mb 280mA
IS43R16160D-6TLI Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Packaging: Tray
- REACH SVHC: No SVHC
- Operating Supply Voltage: 2.5V
- Operating Temperature: -40°C~85°C TA
- Supply Voltage-Max (Vsup): 2.7V
- Height Seated (Max): 1.2mm
- Number of Pins: 66
- Pin Count: 66
- Data Bus Width: 16b
- I/O Type: COMMON
- Clock Frequency: 166MHz
- Refresh Cycles: 8192
- Nominal Supply Current: 280mA
- Standby Current-Max: 0.004A
- Length: 22.22mm
- Interleaved Burst Length: 248
- Memory Size: 256Mb 16M x 16
- Organization: 16MX16
- Access Time: 700ps
- HTS Code: 8542.32.00.24
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Factory Lead Time: 8 Weeks
- Memory Width: 16
- Supply Voltage: 2.5V
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Pitch: 0.65mm
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Number of Terminations: 66
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 2.3V
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Additional Feature: AUTO/SELF REFRESH
- Max Supply Current: 280mA
- Voltage - Supply: 2.3V~2.7V
- Sequential Burst Length: 248
- Address Bus Width: 15b
- Technology: SDRAM - DDR
- Density: 256 Mb
- Package / Case: 66-TSSOP (0.400, 10.16mm Width)
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