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  • Manufacturer No:
    IRFH5302TRPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
    2686518
  • Description:
    N-Channel 30 V 32A (Ta), 100A (Tc) 3.6W (Ta), 100W (Tc) Surface Mount PQFN (5x6) Single Die
  • Quantity:
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Inventory:3835
  • Qty Unit Price price
  • 1 $197.718 $197.718
  • 10 $195.76 $1957.6
  • 100 $193.821 $19382.1
  • 1000 $191.901 $191901
  • 10000 $190 $1900000

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  • Manufacturer No:
    IRFH5302TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFH5302TRPBF
  • SKU:
    2686518
  • Description:
    N-Channel 30 V 32A (Ta), 100A (Tc) 3.6W (Ta), 100W (Tc) Surface Mount PQFN (5x6) Single Die

IRFH5302TRPBF Details

N-Channel 30 V 32A (Ta), 100A (Tc) 3.6W (Ta), 100W (Tc) Surface Mount PQFN (5x6) Single Die

IRFH5302TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Pins: 8
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 5
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Power Dissipation: 100W
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Height: 838.2μm
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Length: 5.9944mm
  • Continuous Drain Current (ID): 32A
  • Turn On Delay Time: 18 ns
  • Turn-Off Delay Time: 22 ns
  • Nominal Vgs: 1.8 V
  • JESD-30 Code: R-PDSO-N5
  • Vgs(th) (Max) @ Id: 2.35V @ 100μA
  • Rds On (Max) @ Id, Vgs: 2.1m Ω @ 50A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 32A Ta 100A Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • REACH SVHC: No SVHC
  • Published: 2009
  • Width: 5mm
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Pulsed Drain Current-Max (IDM): 400A
  • Series: HEXFET?
  • Fall Time (Typ): 18 ns
  • Package / Case: 8-PowerVDFN
  • Resistance: 2.1MOhm
  • Rise Time: 51ns
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
  • Power Dissipation-Max: 3.6W Ta 100W Tc

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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