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- Manufacturer No：IRF7201PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7201PBF
- SKU：2687251
- Description：N-Channel 30 V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
User Guide
User Guide
IRF7201PBF Details
N-Channel 30 V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
IRF7201PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Terminal Finish: Matte Tin (Sn)
- Drain to Source Voltage (Vdss): 30V
- Part Status: Discontinued
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Additional Feature: HIGH RELIABILITY
- Subcategory: FET General Purpose Power
- Series: HEXFET?
- Drain Current-Max (Abs) (ID): 7.3A
- Drain-source On Resistance-Max: 0.03Ohm
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Power Dissipation-Max: 2.5W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 8
- Packaging: Tube
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Published: 2003
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PDSO-G8
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Pulsed Drain Current-Max (IDM): 58A
- JEDEC-95 Code: MS-012AA
- Current - Continuous Drain (Id) @ 25°C: 7.3A Tc
- Avalanche Energy Rating (Eas): 70 mJ
- Rds On (Max) @ Id, Vgs: 30m Ω @ 7.3A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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