Add to like
Add to project list
  • Manufacturer No:
    IRF7309PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
  • SKU:
    2688183
  • Description:
    Mosfet Array N and P-Channel 30V 4A, 3A 1.4W Surface Mount 8-SO
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    IRF7309PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    IRF7309PBF
  • SKU:
    2688183
  • Description:
    Mosfet Array N and P-Channel 30V 4A, 3A 1.4W Surface Mount 8-SO

IRF7309PBF Details

Mosfet Array N and P-Channel 30V 4A, 3A 1.4W Surface Mount 8-SO

IRF7309PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • FET Feature: Standard
  • DS Breakdown Voltage-Min: 30V
  • Published: 2004
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Transistor Application: SWITCHING
  • Pulsed Drain Current-Max (IDM): 16A
  • Subcategory: Other Transistors
  • Power - Max: 1.4W
  • Series: HEXFET?
  • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Drain-source On Resistance-Max: 0.05Ohm
  • JEDEC-95 Code: MS-012AA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 4A 3A
  • Base Part Number: IRF7309PBF
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Surface Mount: YES
  • Number of Terminations: 8
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 30V
  • Part Status: Discontinued
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 4A
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PDSO-G8
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs): 1.4W
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • FET Type: N and P-Channel
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Additional Feature: ULTRA LOW RESISTANCE
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Rds On (Max) @ Id, Vgs: 50m Ω @ 2.4A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via