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Inventory:5205
  • Qty Unit Price price
  • 1 $0.96 $0.96
  • 10 $0.95 $9.5
  • 100 $0.94 $94
  • 1000 $0.93 $930
  • 10000 $0.92 $9200

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  • Manufacturer No:
    IRFU120NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFU120NPBF
  • SKU:
    2688564
  • Description:
    MOSFET N-CH 100V 9.4A I-PAK

IRFU120NPBF Details

MOSFET N-CH 100V 9.4A I-PAK

IRFU120NPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Voltage - Rated DC: 100V
  • Dual Supply Voltage: 100V
  • Max Junction Temperature (Tj): 175°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Published: 1998
  • Subcategory: FET General Purpose Power
  • Width: 2.3mm
  • Recovery Time: 150 ns
  • Additional Feature: AVALANCHE RATED
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Rise Time: 23 ns
  • Resistance: 210mOhm
  • Power Dissipation: 48W
  • Continuous Drain Current (ID): 9.4A
  • Height: 9.75mm
  • Power Dissipation-Max: 48W Tc
  • Current - Continuous Drain (Id) @ 25°C: 9.4A Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • Number of Channels: 1
  • JESD-609 Code: e3
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Drain to Source Breakdown Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Length: 6.6mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Turn On Delay Time: 4.5 ns
  • Turn-Off Delay Time: 32 ns
  • Nominal Vgs: 4 V
  • Lead Free: Contains Lead, Lead Free
  • Drain Current-Max (Abs) (ID): 7.7A
  • Current Rating: 9.4A
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Rds On (Max) @ Id, Vgs: 210m Ω @ 5.6A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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