IRF9Z24NSTRLPBFInfineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF9Z24NSTRLPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF9Z24NSTRLPBF
    • SKU：
      2688587
    • Description：
      P-Channel 55 V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK

    User Guide

    User Guide

    IRF9Z24NSTRLPBF Details

    P-Channel 55 V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK

    IRF9Z24NSTRLPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: Other Transistors
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Width: 9.65mm
    • Rise Time: 55 ns
    • Power Dissipation: 45W
    • Length: 10.668mm
    • Pulsed Drain Current-Max (IDM): 48A
    • Current - Continuous Drain (Id) @ 25°C: 12A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Drain to Source Breakdown Voltage: -55V
    • Dual Supply Voltage: -55V
    • Continuous Drain Current (ID): -12A
    • Avalanche Energy Rating (Eas): 96 mJ
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Lead Free: Contains Lead
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2005
    • Terminal Position: SINGLE
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Voltage (Vdss): 55V
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • FET Type: P-Channel
    • Series: HEXFET?
    • Turn On Delay Time: 13 ns
    • Height: 4.826mm
    • Turn-Off Delay Time: 23 ns
    • Nominal Vgs: 4 V
    • Fall Time (Typ): 37 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Voltage - Rated DC: -55V
    • Current Rating: -12A
    • Power Dissipation-Max: 3.8W Ta 45W Tc
    • Rds On (Max) @ Id, Vgs: 175m Ω @ 7.2A, 10V
    Search for similar products

    IRF9Z24NSTRLPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF9Z24NSTRLPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via