IRF7309TRPBFInfineon
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    Inventory:25598
    • Qty Unit Price price
    • 1 $1220.631 $1220.631
    • 10 $1208.545 $12085.45
    • 100 $1196.579 $119657.9
    • 1000 $1184.731 $1184731
    • 10000 $1173 $11730000

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    • Manufacturer No：
      IRF7309TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7309TRPBF
    • SKU：
      2689099
    • Description：
      MOSFET N/P-CH 30V 4A/3A 8SOIC

    User Guide

    User Guide

    IRF7309TRPBF Details

    MOSFET N/P-CH 30V 4A/3A 8SOIC

    IRF7309TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2001
    • Threshold Voltage: 1V
    • Current Rating: 4A
    • Continuous Drain Current (ID): 4A
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: Other Transistors
    • Turn-Off Delay Time: 25 ns
    • Max Power Dissipation: 1.4W
    • Height: 1.4986mm
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Nominal Vgs: 1 V
    • Width: 4.05mm
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 4A 3A
    • Base Part Number: IRF7309PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • FET Feature: Standard
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Drain Current-Max (Abs) (ID): 4A
    • Transistor Application: SWITCHING
    • Pulsed Drain Current-Max (IDM): 16A
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Resistance: 50mOhm
    • Power Dissipation: 1.4W
    • Series: HEXFET?
    • FET Type: N and P-Channel
    • Length: 4.9784mm
    • Additional Feature: ULTRA LOW RESISTANCE
    • Row Spacing: 6.3 mm
    • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 2.4A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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