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- Manufacturer No：IRF7811A
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7811A
- SKU：2689173
- Description：MOSFET N-CH 28V 11.4A 8-SOIC
User Guide
User Guide
IRF7811A Details
MOSFET N-CH 28V 11.4A 8-SOIC
IRF7811A Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Surface Mount: YES
- Part Status: Obsolete
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drive Voltage (Max Rds On,Min Rds On): 4.5V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- JESD-30 Code: R-PDSO-G8
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Vgs (Max): ±12V
- JEDEC-95 Code: MS-012AA
- Current - Continuous Drain (Id) @ 25°C: 11A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
- Mounting Type: Surface Mount
- RoHS Status: Non-RoHS Compliant
- JESD-609 Code: e3
- Number of Terminations: 8
- Packaging: Tube
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Published: 2007
- Drain to Source Voltage (Vdss): 28V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- Series: HEXFET?
- HTS Code: 8541.29.00.95
- Power Dissipation-Max: 2.5W Ta
- Drain Current-Max (Abs) (ID): 10.8A
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 10m Ω @ 11A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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