IRFU5305PBFInfineon
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    • Manufacturer No：
      IRFU5305PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFU5305PBF
    • SKU：
      2689376
    • Description：
      MOSFET P-CH 55V 31A I-PAK

    User Guide

    User Guide

    IRFU5305PBF Details

    MOSFET P-CH 55V 31A I-PAK

    IRFU5305PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Drain Current-Max (Abs) (ID): 25A
    • Subcategory: Other Transistors
    • Length: 6.6mm
    • FET Type: P-Channel
    • Series: HEXFET?
    • Turn On Delay Time: 14 ns
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Lead Free: Contains Lead, Lead Free
    • Power Dissipation-Max: 110W Tc
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Rise Time: 66 ns
    • Power Dissipation: 89W
    • Current - Continuous Drain (Id) @ 25°C: 31A Tc
    • Voltage - Rated DC: -55V
    • Nominal Vgs: -4 V
    • Continuous Drain Current (ID): -31A
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2004
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Voltage (Vdss): 55V
    • Height: 6.1mm
    • Case Connection: DRAIN
    • Width: 2.3mm
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Lead Length: 9.65mm
    • Lead Pitch: 2.28mm
    • Resistance: 65mOhm
    • Turn-Off Delay Time: 39 ns
    • Threshold Voltage: -4V
    • Fall Time (Typ): 63 ns
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
    • Drain to Source Breakdown Voltage: -55V
    • Avalanche Energy Rating (Eas): 280 mJ
    • Rds On (Max) @ Id, Vgs: 65m Ω @ 16A, 10V
    • Current Rating: -28A
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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