IRF7410PBFInfineon
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    • Manufacturer No：
      IRF7410PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      2689385
    • Description：
      INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
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    • Manufacturer No：
      IRF7410PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7410PBF
    • SKU：
      2689385
    • Description：
      INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV

    User Guide

    User Guide

    IRF7410PBF Details

    INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV

    IRF7410PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • DS Breakdown Voltage-Min: 12V
    • Published: 2006
    • Part Status: Discontinued
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Transistor Application: SWITCHING
    • Drain Current-Max (Abs) (ID): 16A
    • Subcategory: Other Transistors
    • FET Type: P-Channel
    • Pulsed Drain Current-Max (IDM): 65A
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • JEDEC-95 Code: MS-012AA
    • Additional Feature: ULTRA LOW RESISTANCE
    • Current - Continuous Drain (Id) @ 25°C: 16A Ta
    • Input Capacitance (Ciss) (Max) @ Vds: 8676pF @ 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • Surface Mount: YES
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Voltage (Vdss): 12V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PDSO-G8
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Series: HEXFET?
    • Vgs (Max): ±8V
    • Power Dissipation-Max: 2.5W Ta
    • Vgs(th) (Max) @ Id: 900mV @ 250μA
    • Drain-source On Resistance-Max: 0.007Ohm
    • Rds On (Max) @ Id, Vgs: 7m Ω @ 16A, 4.5V
    • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 4.5V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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