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  • Manufacturer No:
    IRF7530TR
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    IRF7530TR
  • SKU:
    2689635
  • Description:
    MOSFET 2N-CH 20V 5.4A MICRO8

IRF7530TR Details

MOSFET 2N-CH 20V 5.4A MICRO8

IRF7530TR Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Qualification Status: Not Qualified
  • Terminal Finish: Matte Tin (Sn)
  • FET Feature: Standard
  • DS Breakdown Voltage-Min: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 40A
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Series: HEXFET?
  • FET Type: 2 N-Channel (Dual)
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Drain-source On Resistance-Max: 0.03Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
  • Number of Elements: 2
  • Packaging: Tape & Reel (TR)
  • RoHS Status: Non-RoHS Compliant
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Published: 2004
  • Transistor Application: SWITCHING
  • Additional Feature: HIGH RELIABILITY
  • Package / Case: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • JESD-30 Code: S-PDSO-G8
  • Power - Max: 1.3W
  • Drain Current-Max (Abs) (ID): 5.4A
  • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Vgs(th) (Max) @ Id: 1.2V @ 250μA
  • Avalanche Energy Rating (Eas): 33 mJ
  • Rds On (Max) @ Id, Vgs: 30m Ω @ 5.4A, 4.5V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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