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- Manufacturer No：IRF640NSTRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF640NSTRLPBF
- SKU：2689815
- Description：MOSFET N-CH 200V 18A D2PAK
User Guide
User Guide
IRF640NSTRLPBF Details
MOSFET N-CH 200V 18A D2PAK
IRF640NSTRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Drain to Source Breakdown Voltage: 200V
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2004
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 18A
- Series: HEXFET?
- Rise Time: 19 ns
- Turn-Off Delay Time: 23 ns
- Nominal Vgs: 4 V
- Pulsed Drain Current-Max (IDM): 72A
- Current - Continuous Drain (Id) @ 25°C: 18A Tc
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
- Avalanche Energy Rating (Eas): 247 mJ
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Voltage - Rated DC: 200V
- Dual Supply Voltage: 200V
- Max Junction Temperature (Tj): 175°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Power Dissipation: 150W
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 10 ns
- Current Rating: 18A
- Resistance: 150mOhm
- Width: 9.65mm
- Fall Time (Typ): 5.5 ns
- Length: 10.668mm
- Lead Free: Contains Lead, Lead Free
- Power Dissipation-Max: 150W Tc
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Height: 5.084mm
- Rds On (Max) @ Id, Vgs: 150m Ω @ 11A, 10V
- Recovery Time: 251 ns
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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