IRG4BC40W-SPBFInfineon
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    IRG4BC40W-SPBF
    • Manufacturer No：
      IRG4BC40W-SPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IRG4BC40W-SPBF
    • SKU：
      2689969
    • Description：
      IGBT 600V 40A 160W D2PAK

    User Guide

    User Guide

    IRG4BC40W-SPBF Details

    IGBT 600V 40A 160W D2PAK

    IRG4BC40W-SPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Collector Emitter Voltage (VCEO): 2.5V
    • Element Configuration: Dual
    • Input Type: Standard
    • Collector Emitter Breakdown Voltage: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Published: 2004
    • Operating Temperature: -55°C~150°C TJ
    • Current Rating: 40A
    • JESD-30 Code: R-PSSO-G2
    • Polarity/Channel Type: N-CHANNEL
    • Mount: Surface Mount, Through Hole
    • Width: 4.826mm
    • Subcategory: Insulated Gate BIP Transistors
    • Collector Emitter Saturation Voltage: 2.05V
    • Max Power Dissipation: 160W
    • Length: 10.668mm
    • Turn On Time: 48 ns
    • Rise Time: 23ns
    • Test Condition: 480V, 20A, 10 Ω, 15V
    • Td (on/off) @ 25°C: 27ns/100ns
    • Turn Off Time-Nom (toff): 294 ns
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 600V
    • Terminal Position: SINGLE
    • Gate-Emitter Thr Voltage-Max: 6V
    • Part Status: Last Time Buy
    • Height: 4.83mm
    • Max Collector Current: 40A
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Case Connection: COLLECTOR
    • Turn-Off Delay Time: 100 ns
    • Transistor Application: POWER CONTROL
    • Current - Collector Pulsed (Icm): 160A
    • Turn On Delay Time: 27 ns
    • Power Dissipation: 160W
    • Fall Time-Max (tf): 110ns
    • Additional Feature: LOW CONDUCTION LOSS
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
    • Gate Charge: 98nC
    • Switching Energy: 110μJ (on), 230μJ (off)
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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