IRFH5300TRPBFInfineon
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    Inventory:9412
    • Qty Unit Price price
    • 1 $1.427 $1.427
    • 10 $1.412 $14.12
    • 100 $1.398 $139.8
    • 1000 $1.384 $1384
    • 10000 $1.37 $13700

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    • Manufacturer No：
      IRFH5300TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFH5300TRPBF
    • SKU：
      2690502
    • Description：
      MOSFET N-CH 30V 40A PQFN

    User Guide

    User Guide

    IRFH5300TRPBF Details

    MOSFET N-CH 30V 40A PQFN

    IRFH5300TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2004
    • Length: 6mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Additional Feature: HIGH RELIABILITY
    • Drain Current-Max (Abs) (ID): 40A
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Rise Time: 30 ns
    • Series: HEXFET?
    • Turn On Delay Time: 26 ns
    • Turn-Off Delay Time: 31 ns
    • Resistance: 1.4MOhm
    • JESD-30 Code: R-PDSO-N5
    • Vgs(th) (Max) @ Id: 2.35V @ 150μA
    • Current - Continuous Drain (Id) @ 25°C: 40A Ta 100A Tc
    • Power Dissipation-Max: 3.6W Ta 250W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 5
    • Threshold Voltage: 1.8V
    • Width: 5mm
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Continuous Drain Current (ID): 100A
    • Height: 850μm
    • Case Connection: DRAIN
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Pulsed Drain Current-Max (IDM): 400A
    • Fall Time (Typ): 13 ns
    • Package / Case: 8-PowerVDFN
    • Power Dissipation: 3.6W
    • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
    • Avalanche Energy Rating (Eas): 420 mJ
    • Rds On (Max) @ Id, Vgs: 1.4m Ω @ 50A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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