Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:35376
- Qty Unit Price price
- 1 $0.97 $0.97
- 10 $0.96 $9.6
- 100 $0.95 $95
- 1000 $0.94 $940
- 10000 $0.93 $9300
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IRF9530NPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9530NPBF
- SKU：2691333
- Description：In a Tube of 50, P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF
User Guide
User Guide
IRF9530NPBF Details
In a Tube of 50, P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF
IRF9530NPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Lead Pitch: 2.54mm
- Drain to Source Voltage (Vdss): 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Case Connection: DRAIN
- Height: 15.24mm
- FET Type: P-Channel
- Peak Reflow Temperature (Cel): 250
- Series: HEXFET?
- Recovery Time: 190 ns
- Drain to Source Breakdown Voltage: -100V
- Pulsed Drain Current-Max (IDM): 56A
- Threshold Voltage: -4V
- Rise Time: 58 ns
- Width: 4.69mm
- Power Dissipation: 79W
- Length: 10.5156mm
- Nominal Vgs: -4 V
- Continuous Drain Current (ID): -14A
- Rds On (Max) @ Id, Vgs: 200m Ω @ 8.4A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Published: 1998
- Subcategory: Other Transistors
- JEDEC-95 Code: TO-220AB
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 200mOhm
- Turn-Off Delay Time: 45 ns
- Voltage - Rated DC: -100V
- Dual Supply Voltage: -100V
- Fall Time (Typ): 46 ns
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
- Current - Continuous Drain (Id) @ 25°C: 14A Tc
- Power Dissipation-Max: 79W Tc
- Avalanche Energy Rating (Eas): 250 mJ
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
- Current Rating: -14A
Search for similar products
IRF9530NPBF Similar Products
The four parts on the right have similar specifications to Infineon & IRF9530NPBF
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
