IRFP250MPBFInfineon
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    • Manufacturer No：
      IRFP250MPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFP250MPBF
    • SKU：
      2691696
    • Description：
      N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC

    User Guide

    User Guide

    IRFP250MPBF Details

    N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC

    IRFP250MPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 30A
    • Transistor Application: SWITCHING
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Width: 5.2mm
    • Series: HEXFET?
    • Resistance: 75mOhm
    • Fall Time (Typ): 33 ns
    • Rise Time: 43 ns
    • Current - Continuous Drain (Id) @ 25°C: 30A Tc
    • Power Dissipation-Max: 214W Tc
    • Length: 16.129mm
    • Rds On (Max) @ Id, Vgs: 75m Ω @ 18A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Drain to Source Breakdown Voltage: 200V
    • Published: 2009
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Terminal Finish: MATTE TIN OVER NICKEL
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Peak Reflow Temperature (Cel): 250
    • Package / Case: TO-247-3
    • Turn On Delay Time: 14 ns
    • Height: 21.1mm
    • JEDEC-95 Code: TO-247AC
    • Turn-Off Delay Time: 41 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Power Dissipation: 214W
    • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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