IRFI540NPBFInfineon
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    • Manufacturer No：
      IRFI540NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFI540NPBF
    • SKU：
      2691895
    • Description：
      MOSFET N-CH 100V 20A TO220FP

    User Guide

    User Guide

    IRFI540NPBF Details

    MOSFET N-CH 100V 20A TO220FP

    IRFI540NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Current Rating: 20A
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • JEDEC-95 Code: TO-220AB
    • Series: HEXFET?
    • Package / Case: TO-220-3 Full Pack
    • Height: 9.8mm
    • Fall Time (Typ): 33 ns
    • Turn-Off Delay Time: 44 ns
    • Current - Continuous Drain (Id) @ 25°C: 20A Tc
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
    • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
    • Length: 10.6172mm
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drain to Source Breakdown Voltage: 100V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Continuous Drain Current (ID): 20A
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Isolation Voltage: 2.5kV
    • Recovery Time: 250 ns
    • Width: 4.826mm
    • Nominal Vgs: 4 V
    • Rise Time: 39 ns
    • Power Dissipation: 42W
    • Turn On Delay Time: 8.2 ns
    • Drain-source On Resistance-Max: 0.052Ohm
    • Power Dissipation-Max: 54W Tc
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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