IRFU9024NPBFInfineon
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    Inventory:845
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    • 1 $1264.337 $1264.337
    • 10 $1251.818 $12518.18
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    • Manufacturer No：
      IRFU9024NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFU9024NPBF
    • SKU：
      2692152
    • Description：
      MOSFET P-CH 55V 11A I-PAK

    User Guide

    User Guide

    IRFU9024NPBF Details

    MOSFET P-CH 55V 11A I-PAK

    IRFU9024NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Published: 1997
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Voltage (Vdss): 55V
    • Case Connection: DRAIN
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Height: 6.22mm
    • Rise Time: 55 ns
    • Turn-Off Delay Time: 23 ns
    • Width: 2.3876mm
    • Length: 6.7056mm
    • Fall Time (Typ): 37 ns
    • Current - Continuous Drain (Id) @ 25°C: 11A Tc
    • Threshold Voltage: -4V
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Power Dissipation-Max: 38W Tc
    • Dual Supply Voltage: -55V
    • Nominal Vgs: -4 V
    • Avalanche Energy Rating (Eas): 62 mJ
    • Rds On (Max) @ Id, Vgs: 175m Ω @ 6.6A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Subcategory: Other Transistors
    • FET Type: P-Channel
    • Series: HEXFET?
    • Turn On Delay Time: 13 ns
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Voltage - Rated DC: -60V
    • Lead Free: Contains Lead, Lead Free
    • Pulsed Drain Current-Max (IDM): 44A
    • Power Dissipation: 38W
    • Resistance: 175mOhm
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Drain to Source Breakdown Voltage: -55V
    • Recovery Time: 71 ns
    • Continuous Drain Current (ID): -11A
    • Current Rating: -1.6A
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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